CRYOGENIC CHARACTERIZATION AND MODELING OF ADVANCED ; RELIABILITY ISSUES IN 3D NAND FLASH MEMORY CELLS AND ; ARRAYS
The PhD project aims to investigate the behavior and reliability of 3D NAND Flash memory at cryogenic temperatures. Through array-level electrical characterizations in a helium-based cryostat, reaching 4.2K, the research explores physical phenomena that are relevant for the operation of 3D NAND Flash arrays over an extremely wide temperature range, providing new insight into their understanding. Particular emphasis is given to Random Telegraph Noise (RTN), polysilicon channel conduction, data retention, and Program/Erase-induced degradation. Experimental results will be used to validate and refine physical models, allowing accurate interpretation of temperature-dependent effects. In addition, at very low temperatures, it becomes possible to observe subtle parasitic effects that are otherwise masked by thermal noise. Providing a solid physical interpretation will be a fundamental asset for analyzing and predicting array reliability, thereby supporting the development of future technology nodes. The outcomes of this research will support the robust exploitation of 3D NAND Flash technology in quantum computing and aerospace systems, while providing predictive insight for future technology nodes operating in extreme environments.
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